Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications

Fereydoon Namavar, Feng Lu, Clive H. Perry, Annmarie Cremins, Nader Kalkhoran, Richard A. Soref

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 μm. A comparison of photoluminescence data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescence efficiency. Due to the 650 to 850°C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si.

Original languageEnglish (US)
Pages (from-to)43-49
Number of pages7
JournalJournal of Electronic Materials
Volume25
Issue number1
DOIs
StatePublished - Jan 1996

Keywords

  • 1.54 μm emission
  • Erbium
  • Porous silicon
  • Room temperature luminescence
  • Si-based light emitting device

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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