Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

A. Sokolov, R. Sabirianov, I. Sabirianov, B. Doudin

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Large hysteretic resistance changes are reported on sub-100nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005Phys. Rev. Lett.95266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

Original languageEnglish (US)
Article number485303
JournalJournal of Physics Condensed Matter
Volume21
Issue number48
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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