Abstract
Large hysteretic resistance changes are reported on sub-100nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005Phys. Rev. Lett.95266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
Original language | English (US) |
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Article number | 485303 |
Journal | Journal of Physics Condensed Matter |
Volume | 21 |
Issue number | 48 |
DOIs | |
State | Published - 2009 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics