TY - JOUR
T1 - What happens when transition metal trichalcogenides are interfaced with gold?
AU - Dhingra, Archit
AU - Nikonov, Dmitri E.
AU - Lipatov, Alexey
AU - Sinitskii, Alexander
AU - Dowben, Peter A.
N1 - Funding Information:
This work was supported by National Science Foundation through EPSCoR RII Track-1: Emergent Quantum Materials and Technologies (EQUATE), Award OIA-2044049.
Publisher Copyright:
© 2022, The Author(s).
PY - 2023/1/14
Y1 - 2023/1/14
N2 - Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results of electrical transport measurements, provide insights into the nature of interactions at the Au/In4Se3, Au/TiS3, Au/ZrS3, Au/HfS3, and Au/HfSe3 interfaces. This may help identify and pave a path toward resolving the contemporary contact-related problems that have plagued the performance of TMT-based nanodevices. Graphical abstract: I–V characteristics of (a) TiS3, (b) ZrS3, and (c) HfS3[Figure not available: see fulltext.].
AB - Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results of electrical transport measurements, provide insights into the nature of interactions at the Au/In4Se3, Au/TiS3, Au/ZrS3, Au/HfS3, and Au/HfSe3 interfaces. This may help identify and pave a path toward resolving the contemporary contact-related problems that have plagued the performance of TMT-based nanodevices. Graphical abstract: I–V characteristics of (a) TiS3, (b) ZrS3, and (c) HfS3[Figure not available: see fulltext.].
KW - 2D materials
KW - Low-dimensional materials
KW - Schottky barrier
KW - TMTs
KW - Transition metal trichalcogenides
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U2 - 10.1557/s43578-022-00744-6
DO - 10.1557/s43578-022-00744-6
M3 - Review article
AN - SCOPUS:85139140553
SN - 0884-2914
VL - 38
SP - 52
EP - 68
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 1
ER -