TY - JOUR
T1 - ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations
AU - Lu, Fengyuan
AU - Lang, Maik
AU - Huang, Mengbing
AU - Namavar, Fereydoon
AU - Trautmann, Christina
AU - Ewing, Rodney C.
AU - Lian, Jie
N1 - Funding Information:
This work was supported as part of the Materials Science of Actinides, an Energy Frontier Research Center, funded by the Office of Basic Energy Sciences under Award No. DE-SC0001089. The authors also thank the staff assistance of the IVEM-Tandem facilities during 1 MeV Kr 2+ irradiation.
PY - 2012/9/1
Y1 - 2012/9/1
N2 - Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.
AB - Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.
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U2 - 10.1016/j.nimb.2012.01.023
DO - 10.1016/j.nimb.2012.01.023
M3 - Article
AN - SCOPUS:84865479339
VL - 286
SP - 266
EP - 270
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -