ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations

Fengyuan Lu, Maik Lang, Mengbing Huang, Fereydoon Namavar, Christina Trautmann, Rodney C. Ewing, Jie Lian

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

Original languageEnglish (US)
Pages (from-to)266-270
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume286
DOIs
StatePublished - Sep 1 2012

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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