ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations

Fengyuan Lu; Maik Lang; Mengbing Huang; Fereydoon Namavar; Christina Trautmann; Rodney C. Ewing; Jie Lian

doi:10.1016/j.nimb.2012.01.023

ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations

Fengyuan Lu, Maik Lang, Mengbing Huang, Fereydoon Namavar, Christina Trautmann, Rodney C. Ewing, Jie Lian

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne ⁺ and 1 MeV Kr ²⁺ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

Original language	English (US)
Pages (from-to)	266-270
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	286
DOIs	https://doi.org/10.1016/j.nimb.2012.01.023
State	Published - Sep 1 2012
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2012.01.023

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Lu, F., Lang, M., Huang, M., Namavar, F., Trautmann, C., Ewing, R. C., & Lian, J. (2012). ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 286, 266-270. https://doi.org/10.1016/j.nimb.2012.01.023

ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations. / Lu, Fengyuan; Lang, Maik; Huang, Mengbing; Namavar, Fereydoon; Trautmann, Christina; Ewing, Rodney C.; Lian, Jie.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 286, 01.09.2012, p. 266-270.

Research output: Contribution to journal › Article

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abstract = "Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.",

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AU - Lu, Fengyuan

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AU - Trautmann, Christina

AU - Ewing, Rodney C.

AU - Lian, Jie

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AB - Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

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